The Operation Characteristics of an Alternating Current Plasma Display Panel With Si-Doped MgO Protecting Layer

In this paper, the operation characteristics of an ac plasma display panel (PDP) with Si-doped MgO protecting layer are investigated. The test panels are fabricated with the protecting layers of conventional MgO and Si-doped MgO, and the operation voltage margin, luminous efficacy, and address discharge time lag are observed. Even though the test panel with Si-doped MgO protecting layer showed lower operation voltages, higher luminous efficacy, and shorter statistical discharge time lag, its addressing discharge characteristics become deteriorated as the scanning time is increased from the end time of the reset period. The photon-induced surface conductivity increased by Si doping into MgO, and surface charges on the Si-doped MgO protecting layer showed faster decay characteristics compared to those on the conventional one. It is believed that the impurity doping into the protecting layer can improve the short-period characteristics of an ac PDP, but the long-term stability of surface charge retention is deteriorated.