DocumentCode
1082150
Title
Micro-Raman/Infrared Temperature Monitoring of Gunn Diodes
Author
Hopper, Richard H. ; Oxley, Christopher H. ; Pomeroy, James W. ; Kuball, Martin
Author_Institution
De Montfort Univ., Leicester
Volume
55
Issue
4
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
1090
Lastpage
1093
Abstract
Temperature measurements have been made on Gunn diode samples, using both infrared (IR) and micro-Raman spectroscopy. Micro-Raman spectroscopy was used to give high-resolution temperature measurements on the active transit region of the Gunn diode. These were directly compared with IR thermal measurements made across the mesa region and also on the metallized top contact of the diode.
Keywords
Gunn diodes; Raman spectra; infrared spectra; temperature measurement; Gunn Diodes; infrared spectroscopy; infrared temperature monitoring; micro-Raman spectroscopy; microRaman temperature monitoring; temperature measurements; Gallium arsenide; Gold; Gunn devices; Infrared spectra; Infrared surveillance; Semiconductor diodes; Spatial resolution; Spectroscopy; Temperature measurement; Temperature sensors; Access resistance; gallium nitride; high-electron mobility transistor (HEMT); infrared (IR) microscopy; phonon scattering; saturation current; velocity field relationship;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.916709
Filename
4456915
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