Title :
Correlation between substrate and gate currents in MOSFET´s
Author :
Tam, Simon ; Ko, Ping-Keung ; Hu, Chenming ; Muller, Richard S.
Author_Institution :
University of California, Berkeley, CA
fDate :
11/1/1982 12:00:00 AM
Abstract :
A correlation between substrate and gate currents in MOSFET´s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET´s with a range of geometries and bias values.
Keywords :
Channel hot electron injection; Current measurement; Degradation; Electron traps; Geometry; Laboratories; MOSFET circuits; Physics; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21019
