DocumentCode
1082280
Title
The effect of sputtered-SiO2 facet coating films on the suppression of self-sustained pulsations in the output of (GaAl)As double-heterostructure lasers during CW operation
Author
Mizuishi, Ken´Ichi ; Chinone, Naoki ; Sato, Hitoshi ; Aiki, Kunio
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
16
Issue
7
fYear
1980
fDate
7/1/1980 12:00:00 AM
Firstpage
728
Lastpage
734
Abstract
In order to clarify the cause of self-sustained pulsation (SSP) associated with degradation, both channeled-substrate-planar and new buried-heterostructure lasers were life tested under various conditions. Surface layers at the laser mirrors, which probably included large nonradiative recombination centers, were etched off to a depth of 200-500 Å by Ar+ ion etching, then sputtered-SiO2 films were deposited on both mirrors without the laser chips being removed from the apparatus. Optical microscope observation for the mirrors of the aged lasers and electroluminescent patterns observed in the active layers revealed that the SSP was caused by a mechanism closely related to optically induced faults, such as
oriented dark line defects, which formed a saturable absorption region in the interior of the laser near the mirror. Facet coating films formed with the above process were found to be quite helpful in suppressing the occurrence of SSP provided that power densities were kept less than the moderately high value of 0.6 MW/cm2(∼15 mW/facet).
oriented dark line defects, which formed a saturable absorption region in the interior of the laser near the mirror. Facet coating films formed with the above process were found to be quite helpful in suppressing the occurrence of SSP provided that power densities were kept less than the moderately high value of 0.6 MW/cm2(∼15 mW/facet).Keywords
CW lasers; Gallium materials/lasers; Pulsed lasers; Aging; Automatic testing; Degradation; Life testing; Mirrors; Optical films; Optical microscopy; Particle beam optics; Sputter etching; Surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070553
Filename
1070553
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