• DocumentCode
    1082290
  • Title

    The effect of parasitic capacitances on the circuit speed of GaAs MESFET ring oscillators

  • Author

    Chang, Christopher T M ; Namordi, Mooshi R. ; White, William A.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    29
  • Issue
    11
  • fYear
    1982
  • fDate
    11/1/1982 12:00:00 AM
  • Firstpage
    1805
  • Lastpage
    1809
  • Abstract
    Circuit parasitic capacitances for GaAs ring oscillators (RO´s) were calculated and used for SPICE2 circuit simulation. The simulated delays agreed with the measured data to within ∼10 percent. The results indicate that the effect of the circuit parasitic capacitances are dominant in determining circuit speed for high-density IC´s at the microwave frequency.
  • Keywords
    Circuit simulation; Delay; Gallium arsenide; High speed integrated circuits; MESFET circuits; Microwave circuits; Microwave frequencies; Microwave integrated circuits; Parasitic capacitance; Ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.21030
  • Filename
    1482527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082290