• DocumentCode
    1082303
  • Title

    LED bandwidth improvement by bipolar pulsing

  • Author

    Dawson, R.W.

  • Author_Institution
    Crawford Hill Lab., Bell Labs., Holmdel, NJ, USA
  • Volume
    16
  • Issue
    7
  • fYear
    1980
  • fDate
    7/1/1980 12:00:00 AM
  • Firstpage
    697
  • Lastpage
    699
  • Abstract
    The application of reverse bias pulses at on-off transitions increased the maximum bit rate of full power operation of long wavelength InGaAsP LED´s from 200 to 300 Mbits/s by reduction of the stored charge fall time. Although designed primarily for nonreturn to zero (NRZ) DS-4 experiments, the circuitry operates from 50 to 300 Mbits/s for the return to zero (RZ) or NRZ format with fixed or pseudo-random word patterns.
  • Keywords
    Light-emitting diodes (LED´s); Amplitude modulation; Bandwidth; Bit rate; Frequency; Light emitting diodes; Optical modulation; Optical signal processing; Power generation; Pulse circuits; Pulse shaping methods;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070555
  • Filename
    1070555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082303