• DocumentCode
    1082309
  • Title

    Computer analysis of DC field and current-density profiles of DAR impatt diode

  • Author

    Datta, D.N. ; Pati, S.P. ; Banerjee, J.P. ; Pal, B.B. ; Roy, S.K.

  • Author_Institution
    University of Calcutta, Calcutta, India
  • Volume
    29
  • Issue
    11
  • fYear
    1982
  • fDate
    11/1/1982 12:00:00 AM
  • Firstpage
    1813
  • Lastpage
    1816
  • Abstract
    A computer study on the dc field and current-density profiles of a Si n+-p-v-n-p+double avalanche region (DAR) Impatt has been carried out. With increasing current density the uniform electric field in the central drift region remains almost unaffected due to cancellation of mobile space charge, in case of symmetrically doped structure. Also the avalanche and drift-zone widths and the RF conversion efficiency remain almost unaltered. For asymmetric doping there is a small space-charge effect.
  • Keywords
    Current density; Diodes; Doping profiles; Electron devices; Implants; MOSFETs; Military computing; Semiconductor process modeling; Space charge; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.21032
  • Filename
    1482529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082309