Computer analysis of DC field and current-density profiles of DAR impatt diode

A computer study on the dc field and current-density profiles of a Si n⁺-p-v-n-p⁺double avalanche region (DAR) Impatt has been carried out. With increasing current density the uniform electric field in the central drift region remains almost unaffected due to cancellation of mobile space charge, in case of symmetrically doped structure. Also the avalanche and drift-zone widths and the RF conversion efficiency remain almost unaltered. For asymmetric doping there is a small space-charge effect.