• DocumentCode
    1082359
  • Title

    Direct observation of the spatial hole burning and the saturation of the spontaneous emission in InGaAsP/InP lasers

  • Author

    Kawaguchi, Hitoshi ; Takahei, Kenichiro

  • Author_Institution
    Nippon Telegraph and Telephone, Public Corporation, Tokyo, Japan
  • Volume
    16
  • Issue
    7
  • fYear
    1980
  • fDate
    7/1/1980 12:00:00 AM
  • Firstpage
    706
  • Lastpage
    708
  • Abstract
    The saturation behavior of the spontaneous emission intensity from a diffused-stripe InGaAsP/InP laser is studied. In InGaAsP/ InP DH lasers, a spontaneous emission can be observed through the InP substrate without any optical loss. The spatial distribution and the spectrum of the emission were directly observed from the substrate surface. The spatial hole burning was observed in the wider stripe lasers but in the case of narrow stripe lasers, the spontaneous emission almost uniformly saturates. The spectrum of the emission from the center of the narrow stripe lasers was analyzed and it was confirmed that, above the threshold current, the spectra in the lasing region saturated over the entire spectral region.
  • Keywords
    Gallium materials/lasers; Spontaneous emission; DH-HEMTs; Gallium arsenide; Gas lasers; Indium phosphide; Laser modes; Semiconductor lasers; Spontaneous emission; Substrates; Surface emitting lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070559
  • Filename
    1070559