• DocumentCode
    1082508
  • Title

    Low-Mass PECVD Oxynitride Gas Chromatographic Columns

  • Author

    Agah, Masoud ; Wise, Kensall D.

  • Author_Institution
    Virginia Polytech. Inst. & State Univ., Blacksburg
  • Volume
    16
  • Issue
    4
  • fYear
    2007
  • Firstpage
    853
  • Lastpage
    860
  • Abstract
    This paper describes the realization of low-power micro gas chromatography columns for portable gas analysis systems. The columns are fabricated using complimentary metal-oxide-semiconductor-compatible buried-channel plasma- enhanced chemical vapor deposition oxynitride films that have nearly zero stress at room temperature, high deposition rate (~1 mum/min), high etch rate selectivity (~1:80), low thermal conductivity (< 5 W/mdegC), and low thermal stress (< 140 kPa/degC). The buried channel process utilizes these films to form 25-cm-long 65-mum-ID semicircular columns on a 6-mm-square chip. With more than 5000 theoretical plates, these columns separate multicomponent gas mixtures with performance comparable to that of commercial fused silica capillary columns. The columns are capable of multisecond analyses when integrated with low-dead-volume injectors and dissipate less than 10 mW at 150degC in vacuum.
  • Keywords
    CMOS integrated circuits; chromatography; gas mixtures; gas sensors; plasma CVD; MEMS; buried channel process; buried-channel plasma-enhanced chemical vapor deposition oxynitride films; commercial fused silica capillary columns; complimentary metal-oxide-semiconductor; gas chromatographic columns; gas sensing; high deposition rate; high etch rate selectivity; low thermal conductivity; low thermal stress; low-mass PECVD oxynitride; low-power micro gas chromatography columns; multicomponent gas mixtures; portable gas analysis systems; semicircular columns; separation column; silicon oxynitride; Chemical vapor deposition; Conductive films; Etching; Gas chromatography; Plasma applications; Plasma chemistry; Plasma temperature; Silicon compounds; Thermal conductivity; Thermal stresses; Buried channel; complimentary metal–oxide–semiconductor (CMOS) compatible; micro gas chromatography (GC); microelectromechanical systems (MEMS); separation column; silicon oxynitride (SiON);
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2007.893515
  • Filename
    4285630