• DocumentCode
    1082512
  • Title

    Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

  • Author

    Djie, H.S. ; Dimas, C.E. ; Ooi, B.S.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA
  • Volume
    18
  • Issue
    16
  • fYear
    2006
  • Firstpage
    1747
  • Lastpage
    1749
  • Abstract
    We demonstrate broadband superluminescent diode at ~1.6-mum peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 degC under 8 kA/cm2
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; quantum well devices; superluminescent diodes; 1.6 mum; 1.7 mW; 20 degC; InAs-InAlGaAs; InAs-InAlGaAs quantum-dash-in-well structure; InP; InP substrate; spectrum ripple; superluminescent diode; Bandwidth; Biomedical optical imaging; Indium phosphide; Optical feedback; Optical fiber networks; Optical sensors; Optical waveguides; Substrates; Superluminescent diodes; Wideband; Optical coherent tomography; quantum-dash; quantum-dot (QD); superluminescent diode (SLD);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.880796
  • Filename
    1668209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082512