Title :
Wideband quantum-dash-in-well superluminescent diode at 1.6 μm
Author :
Djie, H.S. ; Dimas, C.E. ; Ooi, B.S.
Author_Institution :
Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA
Abstract :
We demonstrate broadband superluminescent diode at ~1.6-mum peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 degC under 8 kA/cm2
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; quantum well devices; superluminescent diodes; 1.6 mum; 1.7 mW; 20 degC; InAs-InAlGaAs; InAs-InAlGaAs quantum-dash-in-well structure; InP; InP substrate; spectrum ripple; superluminescent diode; Bandwidth; Biomedical optical imaging; Indium phosphide; Optical feedback; Optical fiber networks; Optical sensors; Optical waveguides; Substrates; Superluminescent diodes; Wideband; Optical coherent tomography; quantum-dash; quantum-dot (QD); superluminescent diode (SLD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.880796
