DocumentCode
1082533
Title
Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET
Author
Curtice, Walter R.
Author_Institution
RCA Laboratories, David Sarnoff Research Center, Princeton, NJ
Volume
29
Issue
12
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
1942
Lastpage
1943
Abstract
Characteristics of a Schottky-barrier GaAs MESFET are calculated using the electron-temperature (ET) model, and the results are compared directly with previous particle-mesh computer models using Monte-Carlo techniques. Agreement is better than for any previous two-dimensional model and, in particular, the earlier field-dependent (FD) model is shown to predict much less current because of the neglect of velocity overshoot effects.
Keywords
Computational modeling; Computer simulation; Electrons; Gallium arsenide; MESFETs; Particle scattering; Physics computing; Predictive models; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21055
Filename
1482552
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