• DocumentCode
    1082536
  • Title

    Laser-induced breakdown in crystalline and amorphous SiO2

  • Author

    Soileau, M.J. ; Bass, M.

  • Author_Institution
    Michelson Laboratory, Naval Weapons Center, China Lake, CA, USA
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    814
  • Lastpage
    814
  • Abstract
    The 1.06 μm breakdown thresholds of crystalline and amorphous SiO2were compared. These materials showed dependences of the breakdown threshold on the focal volume which are consistent with a multiphoton-assisted electron avalanche damage mechanism.
  • Keywords
    Dielectric radiation effects; Laser radiation effects; Quartz materials/devices; Silicon materials/devices; Amorphous materials; Crystalline materials; Crystallization; Electric breakdown; Laser modes; Lenses; Monitoring; Optical materials; Optical scattering; Silicon compounds;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070577
  • Filename
    1070577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082536