A new scaling length for modeling semiconductor space-charge regions

Intrinsic and extrinsic Debye lengths have been extensively used in device modeling work. Recently Jindal and Warner [4], using extrinsic Debye length, have developed a unified solution applicable to all step junctions. They have further extended it to include the semiconductor surface problem [5]. As a result of these general analyses, the role of extrinsic Debye length in distance normalization in cases where mobile charges are dominant has been more clearly understood. A new scaling length, whose use is complementary to that of extrinsic Debye length is proposed for cases where fixed charge is dominant.