• DocumentCode
    1082578
  • Title

    Direct observation of the gate Oxide electric field distribution in Silicon MOSFET´s

  • Author

    Frye, R.C. ; Leamy, H.J.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey, USA
  • Volume
    3
  • Issue
    1
  • fYear
    1982
  • fDate
    1/1/1982 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The charge collected within the SiO2layer of an MOS capacitor during bombardment with kilovolt electrons is approximately proportional to the field in the oxide. We have used this proportionality to form SEM images of the field distribution in MOSFET channels.
  • Keywords
    Electrodes; Electron beams; Electron traps; Geometry; Helium; MOS capacitors; MOSFET circuits; Scanning electron microscopy; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25452
  • Filename
    1482557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082578