Title :
Resonant tunneling devices based word memory cell
Author :
Shieh, Ming-Huei ; Lin, Hung Chang
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
A new scheme for storing a word-wide multibit information very efficiently in a single memory cell using resonant-tunneling diodes (RTDs) is proposed. The proposed cell takes advantages of the folding I-V characteristics of RTD. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-b memory cell scheme using one-peak RTD´s are presented here
Keywords :
cellular arrays; resonant tunnelling diodes; semiconductor storage; 3 bit; folding I-V characteristics; one-peak RTDs; periphery circuit; resonant tunneling devices; single memory cell; word memory cell; word-wide multibit information; Circuit simulation; Diodes; Epitaxial growth; MODFET circuits; Molecular beam epitaxial growth; Multivalued logic; Resonant tunneling devices; Signal processing; Switching circuits; Voltage;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
