DocumentCode
1082727
Title
Injection locking characteristics of an AlGaAs semiconductor laser
Author
Kobayashi, Soichi ; Kimura, Tatsuya
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Masashinoshi, Tokyo, Japan
Volume
16
Issue
9
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
915
Lastpage
917
Abstract
Injection locking of an AlGaAs double-heterostructure laser was studied with respect to locking frequency width and locking gain. The relation of the locking bandwidth versus the ratio of locked laser to injected power was consistent with the analysis on injection locking phenomena by Adler. Measured maximum locking bandwidth was 3 GHz, when locking gain was 23 dB. The 40 dB maximum gain was observed with the 500 MHz locking bandwidth. By measuring the beat notes between two temperature-stabilized free running AlGaAs lasers, the linewidth was estimated as 10 MHz.
Keywords
Gallium materials/lasers; Injection-locked oscillators; Bandwidth; Fiber lasers; Frequency; Injection-locked oscillators; Laser mode locking; Laser modes; Laser tuning; Optical feedback; Optical mixing; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070595
Filename
1070595
Link To Document