DocumentCode
1082732
Title
Alpha-particle-induced field and enhanced collection of carriers
Author
Hu, C.
Author_Institution
University of California, Berkeley, CA
Volume
3
Issue
2
fYear
1982
fDate
2/1/1982 12:00:00 AM
Firstpage
31
Lastpage
34
Abstract
A simple physical model explains all the characteristics of the newly discovered funnelling phenomenon. An alpha strike results in significant field in the quasi-neutral regions to a depth that is equal to 1 + µ 
/µ 
times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.
/µ times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.Keywords
Charge carrier processes; Computer simulation; Current density; Doping; Equations; Geometry; Photovoltaic cells; Predictive models; Semiconductor process modeling; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25467
Filename
1482572
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