• DocumentCode
    1082778
  • Title

    GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

  • Author

    McLevige, W.V. ; Yuan, H.T. ; Duncan, W.M. ; Frensley, W.R. ; Doerbeck, F.H. ; Morkoc, H. ; Drummond, T.J.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    3
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    45
  • Abstract
    Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I2L types of digital integrated circuits.
  • Keywords
    Annealing; Application specific integrated circuits; Bipolar integrated circuits; Digital integrated circuits; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Implants; Microwave transistors; Molecular beam epitaxial growth;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25471
  • Filename
    1482576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082778