Low-K/Cu CMOS-based SoC technology with 115-GHz f/sub T/, 100-GHz f/sub max/, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Author

Guo, Jyh-Chyurn

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

19

Issue

3

fYear

2006

Firstpage

331

Lastpage

338

Abstract

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz f_T, 100-GHz f_max, and sub-1.0-dB NF_min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-mum low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout

Keywords

CMOS logic circuits; MIM devices; Q-factor; copper; inductors; low-k dielectric thin films; millimetre wave integrated circuits; system-on-chip; transceivers; varactors; voltage-controlled oscillators; 0.13 micron; 1 V; 1 dB; 10 GHz; 10 Gbit; 100 GHz; 115 GHz; 80 nm; MiM capacitor; RF CMOS; SoC technology; VCO; aggressive device scaling; back end of line technology; junction varactors; layout optimization; logic CMOS; spiral inductor; CMOS logic circuits; CMOS technology; Inductors; Logic devices; MIM capacitors; MOS devices; Noise measurement; Radio frequency; Spirals; Transceivers; MiM capacitor; RF CMOS; inductor; varactor;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2006.879415

Filename

1668232