• DocumentCode
    1082837
  • Title

    Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy

  • Author

    Chang, T.Y. ; Leheny, R.F. ; Nahory, R.E. ; Silberg, E. ; Ballman, A.A. ; Caridi, E.A. ; Harrold, C.J.

  • Author_Institution
    Bell Laboratories Inc., Holmdel, NJ
  • Volume
    3
  • Issue
    3
  • fYear
    1982
  • fDate
    3/1/1982 12:00:00 AM
  • Firstpage
    56
  • Lastpage
    58
  • Abstract
    In this article we discusss the fabrication of junction field-effect transistors (JFETs) using In0.53Ga0.47As grown p-n junction material prepared by molecular beam epitaxy (MBE). For an n-channel doping of 2 × 1016cm-3and a gate length of 2.0µm, these devices are shown to have a transconductance of 50 mS/mm with a corresponding internal transconductance of 67 mS/mm.
  • Keywords
    Etching; FETs; Indium phosphide; JFETs; Lattices; Leakage current; Molecular beam epitaxial growth; P-n junctions; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25477
  • Filename
    1482582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082837