Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers

We have fabricated the [TaN-Ir₃Si]-HfAlO-LaAlO₃-Hf_0.3O_0.5N_0.2-HfAlO-SiO₂-Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E) condition, an initial memory window of 2.6 V and good extrapolated ten-year retention window of 1.9 V are achieved at 125degC. Very small P/E retention decays of 64/22 mV/dec at 125degC are measured due to double quantum barriers to confine the charges in deep-trapping-energy Hf_0.3O_0.5N_0.2 well.