Title :
Large area GaN Schottky photodiode with low leakage current
Author :
Aslam, S. ; Vest, R.E. ; Franz, D. ; Yan, F. ; Zhao, Y.
Author_Institution :
Raytheon ITSS, Lanham, MD, USA
Abstract :
Pt/n-type GaN Schottky photodiodes with large active areas which exhibit low leakage currents are fabricated. Reverse bias leakage currents of 2.7 nA for a 1 cm2 diode and 14 pA for a 0.25 cm2 diode both at -0.5 V bias are reported. External quantum efficiency measurements between the spectral range 50 to 500 nm gave a peak responsivity of 77.5 mA/W at 320 nm for a 0.25 cm2 diode, corresponding to a spectral detectivity, D*=1.5×1014 cmHz12/ W-1.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; leakage currents; photodiodes; platinum; wide band gap semiconductors; -0.5 V; 0.25 cm; 1 cm; 14 pA; 2.7 nA; 50 to 500 nm; Pt-GaN; Pt-GaN Schottky photodiode; external quantum efficiency; reverse bias leakage currents; spectral detectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045563
