Title :
Current equations for velocity overshoot
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
3/1/1982 12:00:00 AM
Abstract :
A generalized current equation is presented for the operation of submicron devices by supplementing the drift and diffusion currents with gradient, rate and relaxation currents. The equation includes the most important features of velocity overshoot.
Keywords :
Boltzmann equation; Current density; Electron mobility; Geometry; Microscopy; Physics; Poisson equations; Silicon; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25482
