Implementation of high peak-current IGBT gate drive circuits in VLSI compatible BiCMOS technology

Author

Kuratli, Christoph ; Huang, Qiuting ; Biber, Alice

Author_Institution

Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

31

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

924

Lastpage

932

Abstract

A BiCMOS integrated gate-drive (IGD) application specific integrated circuit (ASIC) has been implemented in a 18 V, 3 μm BiCMOS technology for insulated gate bipolar transistor- (IGBT-) based intelligent power modules (IPM). It features various monitoring and control functions such as linear dV/dt feedback and master-slave control of IGBT´s, and is capable of delivering 16-18 A peak current to high capacitive loads. Classic formulas on the current capability of bipolar junction transistors (BJT´s), MOSFET´s, and metal conductors are briefly reviewed and additional experiments are presented in the context of our application

Keywords

BiCMOS integrated circuits; VLSI; circuit feedback; driver circuits; insulated gate bipolar transistors; mixed analogue-digital integrated circuits; monitoring; power integrated circuits; 16 to 18 A; 18 V; 3 micron; ASIC; IGBT gate drive circuits; IGBT-based intelligent power modules; VLSI compatible BiCMOS technology; application specific integrated circuit; control functions; current capability; high capacitive loads; high peak-current drive circuits; insulated gate bipolar transistor; linear dV/dt feedback; master-slave control; monitoring functions; Application specific integrated circuits; BiCMOS integrated circuits; Insulated gate bipolar transistors; Insulation; Integrated circuit technology; Linear feedback control systems; MOSFETs; Master-slave; Monitoring; Multichip modules;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.508204

Filename

508204