DocumentCode :
1082912
Title :
The graded bandgap multilayer avalanche photodiode: A new low-noise detector
Author :
Williams, G.F. ; Capasso, F. ; Tsang, W.T.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
3
Issue :
3
fYear :
1982
fDate :
3/1/1982 12:00:00 AM
Firstpage :
71
Lastpage :
73
Abstract :
We propose a new multistage avalanche photodiode for low-noise optical detection. In each stage, the ionization energy is provided by a heterointerface conduction-band step. Thus, ideally, only electrons cause ionization, and the device mimics a photomultiplier. This detector has intrinsically lower noise and lower operating voltage than conventional avalanche detectors. Designs for 1.3 µm fiber optic systems are presented and possible realizations using molecular beam epitaxy discussed.
Keywords :
Avalanche photodiodes; Electron optics; Ionization; Nonhomogeneous media; Optical design; Optical detectors; Optical noise; Photomultipliers; Photonic band gap; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25483
Filename :
1482588
Link To Document :
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