Effects of subgrain boundaries on carrier transport in zone-melting-recrystallized Si films on SiO2-coated Si substrates

The transport properties of zone-melting-recrystallized Si films on SiO2-coated Si substrates have been studied by the fabrication and characterization of thin-film resistors and n-channel MOSFET´s. Subgrain boundaries, which are the predominant crystal defects in the films, have a relatively low trapping state density (7-8 × 10¹¹cm^-2) and low resistance. N-channel MOSFET´s fabricated in the films exhibit high surface electron mobilities (∼ 640 cm²/V-s) for electron transport either parallel or perpendicular to the subgrain boundaries.