DocumentCode :
1082962
Title :
Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O3/BaRuO3 structure
Author :
Koo, S.-M. ; Lee, M.-S. ; Moon, B.M.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Volume :
40
Issue :
17
fYear :
2004
Firstpage :
1088
Lastpage :
1089
Abstract :
A nonvolatile current sensing device using Pb(Zr0.52,Ti0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.
Keywords :
barium compounds; dielectric hysteresis; dielectric polarisation; electric sensing devices; electrical conductivity measurement; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; 24 h; 80 to 300 K; PZT-BaRuO3; PbZrO3TiO3-BaRuO3; conductivity measurements; current-sensing memory devices; ferroelectric PZT layer; n-type conduction; nonvolatile current-sensing device; oxide structure; polarisation; sheet resistance; thin film channel;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045245
Filename :
1327542
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1082962
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