Title :
Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements
Author :
Shor, Joseph S. ; Bemis, Leala ; Kurtz, Anthony D.
Author_Institution :
Kulite Semicond. Products Inc., Leonia, NJ, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250°C in both longitudinal and transverse configurations. The maximum GF observed was -29.3, corresponding to the piezoresistive coefficient π11. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that, n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration
Keywords :
electric sensing devices; force measurement; piezoelectric semiconductors; piezoelectric transducers; semiconductor materials; silicon compounds; 250 C; 6H-SiC; SiC; beam transducer; force sensor configuration; four-arm integral piezoresistor network; gauge factor; high temperature electromechanical sensors; junction isolated piezoresistors; longitudinal and transverse configuration; monolithic sensor; n-type semiconductor; piezoresistive coefficient; piezoresistive sensing elements; transverse configuration; Electromechanical sensors; Force measurement; Force sensors; Piezoresistance; Piezoresistive devices; Pressure measurement; Strain measurement; Temperature sensors; Testing; Transducers;
Journal_Title :
Electron Devices, IEEE Transactions on
