A comprehensive study of hot-carrier instability in p- and n-type poly-Si gated MOSFET´s

Author

Hsu, Charles C -H ; Wen, Duen-shun ; Wordeman, Matthew R. ; Taur, Yuan ; Ning, Tak H.

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

675

Lastpage

680

Abstract

A comprehensive comparison of hot-carrier instability between p- and n-type poly Si-gated MOSFET´s is presented in this paper. The electron trapping and interface state generation in the 7 nm gate oxide of MOSFET´s are investigated using uniform hot-electron injection from a buried junction injector (BJI) and channel-hot-carrier stress. From BJI experiments, electron trapping (instead of oxide trap generation) and interface state generation are shown to be the major effects of hot-electron injection. Electron trapping and interface state generation are found to be similar in both p- and n-type poly-Si gated MOSFET´s. The dependences of interface state generation by hot electrons on oxide voltages and temperatures are observed to be similar between n- and p-type poly-Si gated MOSFET´s. From the results of channel-hot-carrier stress on surface-channel n- and p-channel MOSFET´s, it was also found that the channel-hot-carrier instabilities of p- and n-type poly-Si gated MOSFET´s are comparable

Keywords

electron traps; elemental semiconductors; hot carriers; insulated gate field effect transistors; interface electron states; silicon; stability; 7 nm; Si; buried junction injector; channel-hot-carrier stress; electron trapping; gate oxide; hot electrons; hot-carrier instability; interface state generation; n-channel; n-type; p-channel; p-type; poly-Si gated device; polysilicon gated MOSFET; surface-channel; uniform hot-electron injection; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFET circuits; Secondary generated hot electron injection; Stability; Stress; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285016

Filename

285016