Title :
Multiply-graded InGaAlAs heterojunction bipolar transistors
Author :
Vicek, J.C. ; Fonstad, C.G.
Author_Institution :
Dept. of Electr. Eng., MIT, Cambridge, MA, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
InGaAlAs-InP double heterojunction bipolar transistors with continuously graded base-emitter and base-collector junctions were successively fabricated, and their DC characteristics measured. The devices exhibited a lower offset voltage (Voffset<20 mV), lower output conductance and higher collector-emitter breakdown voltage (BVCEO>13 V, BVCBO>20 V) than are typically achieved in single heterojunction InGaAlAs devices.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; 13 to 20 V; DC characteristics; InGaAlAs-InP; base-collector junctions; base-emitter junctions; collector-emitter breakdown voltage; continuously graded junctions; double HBT; heterojunction bipolar transistors; offset voltage; output conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910756
