• DocumentCode
    1083122
  • Title

    High efficiency a-Si:H p-i-n solar cell using a SnO2/glass substrate

  • Author

    Iida, H. ; Shiba, N. ; Mishuku, T. ; Ito, A. ; Karasawa, H. ; Yamanaka, M. ; Hayashi, Y.

  • Author_Institution
    Technical Laboratory, Gunma, Japan
  • Volume
    3
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    Dependence of conversion efficiency of a-Si:H p-i-n solar cells on the material of transparent conductive film substrates was studied. Irrespective of preparation method of the transparent conductive film, SnO2films gave an advantage over ITO films for high efficiency cell production by a parallel plate electrode type plasma C.V.D. equipment. A conversion efficiency of 7.19% was achieved by optimizing preparation conditions of the SnO2film and the a-Si:H film.
  • Keywords
    Conductive films; Electrodes; Glass; Indium tin oxide; Optical films; PIN photodiodes; Photovoltaic cells; Spraying; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25503
  • Filename
    1482608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083122