Title :
The origins of the performance degradation of implanted p+ polysilicon gated p-channel MOSFET with/without rapid thermal annealing
Author :
Hsieh, J.C. ; Fang, Y.K. ; Chen, C.W. ; Tsai, N.S. ; Lin, M.S. ; Tseng, F.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1994 12:00:00 AM
Abstract :
Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and transconductance (gm) instability have been found in BF2 implanted p+-polysilicon P-MOSFET´s. These effects are supposed to be due to B-ion penetration. To prevent the B-ion penetration, RTA has been used. Experimental results show that RTA can improve the effect, however, the RTA process can also cause the generation of interface states, gate-induced-drain-leakage increase, and oxide quality degradation. All of the mechanisms of performance degradation are investigated and modeled in detail
Keywords :
annealing; boron compounds; elemental semiconductors; insulated gate field effect transistors; interface electron states; ion implantation; leakage currents; rapid thermal processing; silicon; B-ion penetration prevention; BF2 implant; RTA process; Si:BF2; gate-induced-drain-leakage; implanted p+ polysilicon; interface states generation; leakage current increase; model; oxide quality degradation; p-channel MOSFET; performance degradation; polysilicon gated MOSFET; punchthrough voltage reduction; rapid thermal annealing; transconductance instability; Boron; Furnaces; Leakage current; MOSFET circuits; Rapid thermal annealing; Semiconductor films; Silicon; Surface resistance; Thermal degradation; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
