The effects of fluorine passivation on polysilicon thin-film transistors

Author

Chern, Horng Nan ; Lee, Len ; Lei, Tan Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

698

Lastpage

702

Abstract

The fluorine implantation on polysilicon was found to improve the characteristics of polysilicon thin-film transistors (TFT´s). The fluorine passivates the trap states within the polysilicon channel, as compared with the H₂-plasma passivation. The fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the H₂-plasma treatment is more effective to passivate deep states than tail states. A fluorine-implanted device can be further improved its performance if an H₂-plasma treatment is applied. In contrast to the H₂-plasma passivation, the fluorine passivation improves the device hot-carrier immunity. Combining the fluorine passivation and H₂-plasma passivation, a high performance TFT with a high hot-carrier immunity can be obtained

Keywords

elemental semiconductors; fluorine; hot carriers; ion implantation; passivation; silicon; thin film transistors; F passivation; H₂-plasma passivation; Si:F; band tail-states; device hot-carrier immunity; fluorine implantation; fluorine passivation; fluorine-implanted device; high hot-carrier immunity; high performance TFT; midgap deep-state; polysilicon channel; polysilicon thin-film transistors; trap states; Annealing; Grain size; Hot carriers; Hydrogen; Passivation; Plasma devices; Plasma properties; Plasma temperature; Tail; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285019

Filename

285019