Title :
The effects of fluorine passivation on polysilicon thin-film transistors
Author :
Chern, Horng Nan ; Lee, Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1994 12:00:00 AM
Abstract :
The fluorine implantation on polysilicon was found to improve the characteristics of polysilicon thin-film transistors (TFT´s). The fluorine passivates the trap states within the polysilicon channel, as compared with the H2-plasma passivation. The fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the H2-plasma treatment is more effective to passivate deep states than tail states. A fluorine-implanted device can be further improved its performance if an H2-plasma treatment is applied. In contrast to the H2 -plasma passivation, the fluorine passivation improves the device hot-carrier immunity. Combining the fluorine passivation and H2 -plasma passivation, a high performance TFT with a high hot-carrier immunity can be obtained
Keywords :
elemental semiconductors; fluorine; hot carriers; ion implantation; passivation; silicon; thin film transistors; F passivation; H2-plasma passivation; Si:F; band tail-states; device hot-carrier immunity; fluorine implantation; fluorine passivation; fluorine-implanted device; high hot-carrier immunity; high performance TFT; midgap deep-state; polysilicon channel; polysilicon thin-film transistors; trap states; Annealing; Grain size; Hot carriers; Hydrogen; Passivation; Plasma devices; Plasma properties; Plasma temperature; Tail; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
