Title :
1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s
Author :
Olsen, Gregory H. ; Hawrylo, Frank Z. ; Channin, Donald J. ; Botez, Dan ; Ettenberg, M.
Author_Institution :
Sensors Unlimited. Inc., Princeton, NJ, USA
fDate :
10/1/1981 12:00:00 AM
Abstract :
Comparably high performance has been obtained from both vapor-phase and liquid-phase epitaxy InGaAsP/InP 1.3 μm edge-emitting LED´s. Best results include 135 μW of optical power coupled into a 50 μm core 0.2 NA graded-index fiber, spectral half-widths ∼600 Å, rise/fall times ∼2 ns, ac modulation rates ∼200 MHz, and reliable operation in excess of 17 000 h @70°C and 3000 h @120°C. Asymmetries in the far-field patterns of these devices are also discussed.
Keywords :
Light-emitting diodes (LED´s); Epitaxial growth; Fiber lasers; Gold; Indium phosphide; Metallization; Optical coupling; Optical fiber devices; Optical transmitters; Stimulated emission; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1070635
