Title :
Determination of built-in-potential in N-I-P a-Si:H solar cells
Author :
Han, M.-K. ; Sung, P. ; Anderson, W.A.
Author_Institution :
State University of New York at Buffalo, Amherst, NY
fDate :
5/1/1982 12:00:00 AM
Abstract :
This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi= 1.02 eV ± 0.02 eV was obtained for a N-I-P cell having Voc= 650 mV under AM1 illumination.
Keywords :
Capacitance-voltage characteristics; Glow discharges; Lighting; P-n junctions; Photovoltaic cells; Schottky diodes; Semiconductor diodes; Space charge; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25506
