Title :
Tantalum oxide capacitors for GaAs monolithic integrated circuits
Author :
Elta, M.E. ; Chu, A. ; Mahoney, L.J. ; Cerretani, R.T. ; Courtney, W.E.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
5/1/1982 12:00:00 AM
Abstract :
The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.
Keywords :
Dielectric substrates; Gallium arsenide; MIM capacitors; MMICs; Metal-insulator structures; Microwave integrated circuits; Monolithic integrated circuits; Resists; Sandwich structures; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25508
