Modeling of ultrathin double-gate nMOS/SOI transistors

Author

Francis, Pascale ; Terao, Akira ; Flandre, Denis ; Van de Wiele, Fernand

Author_Institution

Lab. de Microelectron., Univ. Catholique de Louvain, Belgium

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

715

Lastpage

720

Abstract

An analytical model valid near and below threshold is derived for double-gate nMOS/SOI devices. The model is based on Poisson´s equation, containing both the doping impurity charges and the electron concentration. An original assumption of the constant difference between surface and mid-film potentials is successfully introduced. The model provides explicit expressions of the threshold voltage and threshold surface potential, which may no longer be assumed to be pinned at the limit of strong inversion, and demonstrates the nearly ideal subthreshold slope of ultrathin double-gate SOI transistors. Very good agreement with numerical simulations is observed. Throughout the paper we give an insight into weak inversion mechanisms occurring in thin double-gate structures

Keywords

doping profiles; insulated gate field effect transistors; inversion layers; semiconductor device models; semiconductor-insulator boundaries; silicon; Poisson´s equation; analytical model; doping impurity charges; electron concentration; mid-film potentials; nearly ideal subthreshold slope; threshold surface potential; threshold voltage; ultrathin double-gate nMOS/SOI transistors; weak inversion mechanisms; Analytical models; Dielectric substrates; Doping; Electrons; Impurities; MOS devices; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285022

Filename

285022