Prediction and Control of Transistor Threshold Voltage by Virtual Metrology (Virtual PCM) Using Equipment Data

Author

Tanaka, T. ; Yasuda, Shuhei

Author_Institution

Panasonic Corp., Uozu, Japan

Volume

26

Issue

3

fYear

2013

fDate

Aug. 2013

Firstpage

339

Lastpage

343

Abstract

This paper is a description of how to predict and control the transistor threshold voltage ( Vth) for an advanced system on chip (SoC) by virtual metrology (VM), which we call virtual process control module (PCM), by using equipment data. Impact analysis for Vth variation by using a Virtual PCM model indicates that the impact of source and drain (S/D) resistance and extension resistance are comparable with that of the shape factor (i.e., gate length, sidewall width). Virtual metrology models for the resistance were developed to control and predict Vth. As a result of the VM control, Vth variation was reduced by 28%. Moreover, in-process prediction of Vth was put into practical use.

Keywords

process control; system-on-chip; transistor circuits; voltage control; drain resistance; equipment data; extension resistance; impact analysis; source resistance; system on chip; transistor threshold voltage; virtual metrology models; virtual process control module; Control; equipment data; prediction; system on chip (SoC); transistor threshold voltage ($V$th); virtual metrology (VM);

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2013.2269147

Filename

6541972