DocumentCode :
1083211
Title :
Demonstration of electrical performance of QGBF polysilicon solar cell structure
Author :
Gonzalez, F. ; Neugroschel, A.
Author_Institution :
University of Florida, Gainesville, FL
Volume :
3
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
134
Lastpage :
137
Abstract :
Small-area p/n junction photodiodes have been fabricated on Wacker polysilicon material using the novel concept of quasi-grain-boundary-free (QGBF) solar cells. The use of small-area structures simulates the predominance of grain-boundary recombination in determining the conversion efficiency in small-grain polysilicon solar cells. The electrical performance of the QGBF test photodiodes is shown to be comparable to single crystal photodiodes fabricated on the same wafer.
Keywords :
Crystalline materials; Degradation; Diodes; Electric variables measurement; Etching; Grain boundaries; Materials testing; Photodiodes; Photovoltaic cells; Silicon;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25512
Filename :
1482617
Link To Document :
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