• DocumentCode
    1083211
  • Title

    Demonstration of electrical performance of QGBF polysilicon solar cell structure

  • Author

    Gonzalez, F. ; Neugroschel, A.

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    3
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    Small-area p/n junction photodiodes have been fabricated on Wacker polysilicon material using the novel concept of quasi-grain-boundary-free (QGBF) solar cells. The use of small-area structures simulates the predominance of grain-boundary recombination in determining the conversion efficiency in small-grain polysilicon solar cells. The electrical performance of the QGBF test photodiodes is shown to be comparable to single crystal photodiodes fabricated on the same wafer.
  • Keywords
    Crystalline materials; Degradation; Diodes; Electric variables measurement; Etching; Grain boundaries; Materials testing; Photodiodes; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25512
  • Filename
    1482617