DocumentCode
1083230
Title
Donor-like interface trap generation in pMOSFET´s at room temperature
Author
Zhang, J.F. ; Eccleston, Bill
Author_Institution
Dept. of Electr. & Electron. Eng., Liverpool John Moores Univ., UK
Volume
41
Issue
5
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
740
Lastpage
744
Abstract
The generation of donor-like interface traps under room temperature bias stress is observed. This generation process is insensitive to the gate polarity, hot carrier stress, and positive charge formation in the gate oxide. It requires the simultaneous presence of boron- and water-related species. The generated interface traps are nonuniformly distributed along the channel
Keywords
electron traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; boron-related species; channel length; donor-like interface traps; gate oxide; gate polarity; hot carrier stress; nonuniform distribution; pMOSFETs; positive charge formation; room temperature bias stress; water-related species; Degradation; Distributed power generation; Electron traps; Hot carriers; MOSFET circuits; Stress; Substrates; Temperature; Threshold voltage; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.285026
Filename
285026
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