• DocumentCode
    1083296
  • Title

    An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate

  • Author

    Liao, A.S.H. ; Tell, B. ; Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J.

  • Author_Institution
    Bell Laboratories, Holmdel, NJ, USA
  • Volume
    3
  • Issue
    6
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    158
  • Lastpage
    160
  • Abstract
    We describe the operation of an In0.53Ga0.47As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a transconductance of 4 mS/mm and an effective channel mobility of more than 50% of the bulk hole mobility. This device is the first demonstration of a native oxide insulated gate MOSFET in the In1-xGaxAsyP1-ymaterial system.
  • Keywords
    Electrodes; Indium gallium arsenide; Insulation; MISFETs; MOSFET circuits; Plasma applications; Plasma devices; Plasma sources; Voltage; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25521
  • Filename
    1482626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083296