Title :
An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate
Author :
Liao, A.S.H. ; Tell, B. ; Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J.
Author_Institution :
Bell Laboratories, Holmdel, NJ, USA
fDate :
6/1/1982 12:00:00 AM
Abstract :
We describe the operation of an In0.53Ga0.47As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a transconductance of 4 mS/mm and an effective channel mobility of more than 50% of the bulk hole mobility. This device is the first demonstration of a native oxide insulated gate MOSFET in the In1-xGaxAsyP1-ymaterial system.
Keywords :
Electrodes; Indium gallium arsenide; Insulation; MISFETs; MOSFET circuits; Plasma applications; Plasma devices; Plasma sources; Voltage; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25521
