DocumentCode :
1083306
Title :
Pulsed laser-induced damage to thin-film optical coatings - Part II: Theory
Author :
Walker, Thomas W. ; Guenther, Arthur H. ; Nielsen, Philip
Author_Institution :
Air Force Weapons Laboratory, Kirtland Air Force Base, NM, USA
Volume :
17
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
2053
Lastpage :
2065
Abstract :
In this paper the theories of avalanche ionization, multiphoton absorption, and impurity-initiated laser-induced damage are treated. At first inspection, none of these theories adequately describe the experimental observations of the variation of pulsed laser damage threshold in optical thin films with changes in material property, laser wavelength, pulse length, or film thickness. However, it is shown that the inclusion of a Mie absorption cross section for a range of dielectric impurity sizes provides a good description of the database with the impurity model. It is also shown that the thermal properties of the host film material and impurity are of considerable importance in explaining observed experimental data.
Keywords :
Charge carrier processes; Coatings; Dielectric films; Dielectric radiation effects; Laser radiation effects; Optical materials/devices; Pulsed lasers; Absorption; Dielectric thin films; Impurities; Inspection; Ionization; Laser modes; Laser theory; Laser transitions; Optical films; Optical pulses;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1070650
Filename :
1070650
Link To Document :
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