DocumentCode
1083365
Title
Breakdown stability of gold, aluminum, and tungsten Schottky barriers on gallium arsenide
Author
Baliga, B.J. ; Ehle, R. ; Sears, A. ; Campbell, P. ; Garwacki, W. ; Katz, W.
Author_Institution
General Electric Company, Schenectady, NY
Volume
3
Issue
7
fYear
1982
fDate
7/1/1982 12:00:00 AM
Firstpage
177
Lastpage
179
Abstract
The stability of the breakdown voltage of Au, Al, and W Schottky barrier diodes fabricated on n-type GaAs has been evaluated. The nearly ideal breakdown voltage of Au diodes was found to degrade upon annealing, even at below 150°C. The breakdown voltage of the as-deposited Al diodes was half that of the Au diodes, and degraded upon annealing at above 450°C. Secondary ion mass spectroscopy (SIMS) measurements revealed penetration of Al into the GaAs. The breakdown voltage of W diodes increased to equal that of the Au diodes upon annealing above 400°C and remained stable at up to 550°C. No interdiffusion at the W/GaAs interface was observed.
Keywords
Aluminum; Annealing; Degradation; Electric breakdown; Gallium arsenide; Gold; Schottky barriers; Schottky diodes; Stability; Tungsten;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25528
Filename
1482633
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