• DocumentCode
    1083400
  • Title

    Models of dependence of controllable current on number of islands in gate turn-off thyristors

  • Author

    Gribnikov, Zinovi ; Melnikova, Yuliya ; Rokhlenko, Alexander ; Rothwarf, Allen ; Mehta, Harshad

  • Author_Institution
    Inst. of Semicond., Acad. of Sci., Kiev, Ukraine
  • Volume
    41
  • Issue
    5
  • fYear
    1994
  • fDate
    5/1/1994 12:00:00 AM
  • Firstpage
    836
  • Lastpage
    842
  • Abstract
    The maximum controllable on-state current, IM, of a multi-island GTO, is calculated as a function of the number of islands. The limit considered is based upon the premise that if the instantaneous current through the cathode of an island exceeds a critical value ic, then that island, and hence the GTO, will not turn off. Our approach is based upon the observed variation in the storage times of individual islands after the initiation of the gate turn-off current. The distribution of storage times is treated as a distribution of random numbers. Both a homogeneous and a Gaussian distribution are treated. The functional form in time of the fall in current through an island, after the storage time was also found to be important. If an island shuts off within a time short compared to the spread in storage times, then IM will be small and not scale with the number of islands N. The conditions under which IM~N might be obtained are discussed
  • Keywords
    electric current; equivalent circuits; semiconductor device models; thyristors; Gaussian distribution; controllable current dependence; gate turnoff current; gate turnoff thyristors; homogeneous distribution; models; multi-island GTO; storage times; Cathodes; Critical current; Fingers; Gaussian distribution; Helium; Integrated circuit modeling; Proportional control; Strips; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.285039
  • Filename
    285039