Title :
Correction to “InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies” [Feb 08 271-286]
Author :
Rodwell, M. J. W. ; Le, Matthew ; Brar, B.
fDate :
4/1/2008 12:00:00 AM
Abstract :
In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.
Keywords :
Bandwidth; Conductivity; Dielectrics; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Paper technology; Pulp manufacturing; Semiconductor device doping; Semiconductor device manufacture;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2008.918954
