DocumentCode :
1083429
Title :
Effects of ionizing radiation on n-channel MOSFET´s fabricated in zone-melting-recrystallized Si films on SiO2
Author :
Tsaur, B-Y. ; Fan, J.C.C. ; Turner, G.W. ; Silversmith, D.J.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA, USA
Volume :
3
Issue :
7
fYear :
1982
fDate :
7/1/1982 12:00:00 AM
Firstpage :
195
Lastpage :
197
Abstract :
We have investigated the effects of irradiation with 1.5 MeV electrons on the electrical characteristics of n-channel MOSFET´s fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates. With a -15 V bias applied to the Si substrate during irradiation and device operation, the subthreshold leakage current remains below 0.2 pA/µm (channel width) for ionizing doses up to 106rad(Si). The negative substrate bias also reduces the shift of threshold voltage to less than 0.3 V for devices with 50 nm-thick gate oxide.
Keywords :
Circuits; Coatings; Electron traps; Fabrication; Ionizing radiation; Leakage current; Semiconductor films; Substrates; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25535
Filename :
1482640
Link To Document :
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