Title :
Simulation of non steady-state transport in GaAs and InP millimeter Impatt diodes
Author :
Lippens, D. ; Constant, E. ; Friscourt, M.R. ; Rolland, P.A. ; Salmer, G.
Author_Institution :
Université des Sciences et Techniques de Lille, Villeneuve d´´Ascq Cedex, France
fDate :
7/1/1982 12:00:00 AM
Abstract :
Large-signal simulations of non-stationary transport in GaAs and InP millimeter Impatt diodes have been performed. This study of the influence of non steady-state features on the performance of a 100 GHz operation shows that non punch-through structures still present interesting performances at this frequency. However, for this type of structure, InP exhibits significant advantages over GaAs for the manufacture of high efficiency diodes.
Keywords :
Electrons; Equations; Frequency; Gallium arsenide; Indium phosphide; Manufacturing; Millimeter wave devices; Oscillators; Semiconductor diodes; Steady-state;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25542
