Title :
A 200 MHz CMOS Q-enhanced LC bandpass filter
Author :
Kuhn, William B. ; Stephenson, F. William ; Elshabini-Riad, Aicha
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
fDate :
8/1/1996 12:00:00 AM
Abstract :
This paper presents design techniques and performance bounds for implementing Q-enhanced, LC bandpass filters in silicon IC technologies. These filters offer significant advantages over switched capacitor and Gm-C based designs, including higher frequency of operation and lower power consumption for a given dynamic range. A prototype 200 MHz, fourth-order filter implemented in a 2 μm n-well CMOS process is described, and measured performance is compared with theoretical predictions. The prototype filter operates at a selectivity Q of 100 and draws less than 8 mA when operating from 3 to 5 V supplies, making it potentially suitable for use as a first IF filter in modern cellular and PCS receivers
Keywords :
CMOS analogue integrated circuits; Q-factor; band-pass filters; cellular radio; elemental semiconductors; passive filters; personal communication networks; silicon; 2 micron; 200 MHz; 3 to 5 V; 8 mA; IC technologies; PCS receivers; Q-enhanced LC bandpass filter; Si; cellular receivers; dynamic range; fourth-order filter; n-well CMOS process; operation frequency; power consumption; selectivity Q; Band pass filters; CMOS process; CMOS technology; Capacitors; Dynamic range; Energy consumption; Frequency; Personal communication networks; Prototypes; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
