• DocumentCode
    1083566
  • Title

    Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices

  • Author

    Milano, R.A. ; Cohen, M.J. ; Miller, D.L.

  • Author_Institution
    Rockwell International, Thousand Oaks, CA, USA
  • Volume
    3
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    194
  • Lastpage
    196
  • Abstract
    The advantages of the modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined. In addition, the first demonstration of charge transfer in a modulation-doped AlGaAs/GaAs heterojunction is reported. A ten cell, three phase Schottky barrier gate CCD was fabricated using this structure and operated as a shift register. The details of the device fabrication and characterization are presented.
  • Keywords
    Charge coupled devices; Charge transfer; Charge-coupled image sensors; Dynamic range; Electrons; Epitaxial layers; Fabrication; Gallium arsenide; MESFETs; Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25548
  • Filename
    1482653
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083566