• DocumentCode
    1083629
  • Title

    Compact multiple-valued multiplexers using negative differential resistance devices

  • Author

    Chan, H.L. ; Mohan, S. ; Mazumder, Pinaki ; Haddad, George I.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    31
  • Issue
    8
  • fYear
    1996
  • fDate
    8/1/1996 12:00:00 AM
  • Firstpage
    1151
  • Lastpage
    1156
  • Abstract
    Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be used either as analog multiplexers where the signal on a single select line selects one out of four analog inputs, or as four-valued logic multiplexers where the select line and the input lines represent one of four quantized signal values and the output line corresponds to the selected input. Any four-valued logic function can be implemented using only four-valued multiplexers (also known as T-gates), and this T-gate uses just 13 devices (transistors) as compared to 44 devices in CMOS. The design of the T-gate was done using a combination of resonant tunneling diodes (RTD´s) and heterojunction bipolar transistors (HBT´s) with the folded I-V characteristic (NDR characteristic) of the RTD´s providing the compact logic implementation and the HBT´s providing the gain and isolation. The application of the same design principles to the design of T-gates using other NDR devices such as resonant tunneling hot electron transistors (RHET´s) and resonant tunneling bipolar transistors (RTBT´s) is also demonstrated
  • Keywords
    heterojunction bipolar transistors; hot electron transistors; multiplexing; multiplexing equipment; multivalued logic; negative resistance devices; quantum interference devices; resonant tunnelling diodes; resonant tunnelling transistors; T-gates; analog multiplexers; compact multiple-valued multiplexers; folded I-V characteristics; four-valued logic multiplexers; heterojunction bipolar transistors; negative differential resistance devices; quantum electronic devices; resonant tunneling bipolar transistors; resonant tunneling diodes; resonant tunneling hot electron transistors; Bipolar transistors; CMOS logic circuits; Diodes; Electrons; Heterojunction bipolar transistors; Logic design; Logic devices; Logic functions; Multiplexing; Resonant tunneling devices;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.508262
  • Filename
    508262