DocumentCode
1083629
Title
Compact multiple-valued multiplexers using negative differential resistance devices
Author
Chan, H.L. ; Mohan, S. ; Mazumder, Pinaki ; Haddad, George I.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
31
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1151
Lastpage
1156
Abstract
Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be used either as analog multiplexers where the signal on a single select line selects one out of four analog inputs, or as four-valued logic multiplexers where the select line and the input lines represent one of four quantized signal values and the output line corresponds to the selected input. Any four-valued logic function can be implemented using only four-valued multiplexers (also known as T-gates), and this T-gate uses just 13 devices (transistors) as compared to 44 devices in CMOS. The design of the T-gate was done using a combination of resonant tunneling diodes (RTD´s) and heterojunction bipolar transistors (HBT´s) with the folded I-V characteristic (NDR characteristic) of the RTD´s providing the compact logic implementation and the HBT´s providing the gain and isolation. The application of the same design principles to the design of T-gates using other NDR devices such as resonant tunneling hot electron transistors (RHET´s) and resonant tunneling bipolar transistors (RTBT´s) is also demonstrated
Keywords
heterojunction bipolar transistors; hot electron transistors; multiplexing; multiplexing equipment; multivalued logic; negative resistance devices; quantum interference devices; resonant tunnelling diodes; resonant tunnelling transistors; T-gates; analog multiplexers; compact multiple-valued multiplexers; folded I-V characteristics; four-valued logic multiplexers; heterojunction bipolar transistors; negative differential resistance devices; quantum electronic devices; resonant tunneling bipolar transistors; resonant tunneling diodes; resonant tunneling hot electron transistors; Bipolar transistors; CMOS logic circuits; Diodes; Electrons; Heterojunction bipolar transistors; Logic design; Logic devices; Logic functions; Multiplexing; Resonant tunneling devices;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.508262
Filename
508262
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